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| AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It is ESD protected. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD486A is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 40V ID = 50 A (VGS = 10V) RDS(ON) < 9.8 m (VGS = 10V) RDS(ON) < 13 m (VGS = 4.5V) ESD PROTECTED UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 40 20 50 36 100 30 135 50 25 4.1 2.7 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 17.4 45 1.2 Max 30 60 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=40V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=20A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 100 8.1 12.15 10.8 47 0.76 1 50 1600 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 320 100 3.4 22 VGS=10V, VDS=20V, ID=20A 10.5 4.2 4.8 6.5 VGS=10V, VDS=20V, RL=1, RGEN=3 IF=20A, dI/dt=100A/s 12.5 33 16 31 33 1920 9.8 16 13 2 Min 40 1 5 100 3 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The package is limited to a maximum of 25A continuous current. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 80 60 ID (A) ID(A) 5V 4V 60 40 80 125C 100 VDS=5V -40C 25C 40 20 VGS=3.5V VGS=3V 20 125C -40C 25C 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 14 VGS=4.5V Normalized On-Resistance 12 RDS(ON) (m) 0 2 2.5 3 3.5 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=10V ID=20A 500 150 60 1.4 10 1.2 VGS=4.5V ID=5A 8 VGS=10V 1 0.8 6 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 40 35 30 RDS(ON) (m) 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS (A) ID=20A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C -40C Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 24 Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 0.1 1 VDS (Volts) 10 100 TJ(Max)=175C TC=25C RDS(ON) limited 100 Power (W) 100s DC 1ms VDS=20V ID=20A Capacitance (pF) 2400 2000 1600 1200 800 400 0 0 5 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 10 15 40 Coss Crss Ciss 200 160 120 80 40 0 0.0001 0.001 0.01 0.1 500 150 60 TJ(Max)=175C Tc=25C 1 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD486A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 110 ID(A), Peak Avalanche Current 100 Power Dissipation (W) 0.001 90 80 70 60 50 40 30 20 10 0 0.000001 0.00001 0.0001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TA=25C TA=150C 55 50 45 40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 60 50 Current rating ID(A) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 100 90 80 70 Power (W) 60 50 40 30 20 10 0 0.001 0.01 0.1 1 10 500 150 60 TA=25C 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.01 0.1 1 10 0.01 T 100 1000 0.001 0.00001 0.0001 0.001 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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